Applied Physics Letters · 1992 · 479 citations · 18 references
Optical MaterialsSpherical Silicon CrystallitesEngineeringOptoelectronic DevicesSilicon On InsulatorElectronic StructureSilicon CrystallitesSemiconductor NanostructuresSemiconductorsOptical PropertiesPorous SiliconMaterials SciencePhotoluminescencePhysicsCrystalline DefectsOptoelectronic MaterialsPhotonic MaterialsSemiconductor MaterialApplied PhysicsAmorphous SolidSmall Silicon Crystallites
We have calculated the electronic structure of spherical silicon crystallites containing up to 2058 Si atoms. We predict a variation of the optical band gap with respect to the size of the crystallites in very good agreement with available experimental results. We also calculate the electron-hole recombination time which is of the order of 10−4–10−6 s for crystallites with diameters of 2.0–3.0 nm. We conclude that small silicon crystallites can have interesting optical properties in the visible range. These results are applied to porous silicon for which we confirm that a possible origin of the luminescence is the quantum confinement.
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Luminescence degradation in porous silicon
M. A. Tischler, R. T. Collins, J. H. Stathis et al. · Applied Physics Letters · 1992 · 465 citations