IEEE Electron Device Letters · 2013 · 127 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDisplay TechnologiesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsOrganic Electronic MaterialsOrganic SemiconductorsThin-film TransistorsAmorphous Indium Gallium Zinc OxideBottom-gate ArchitecturesDisplay Driving CircuitsOrganic Light-emitting DiodesOrganic Thin-film TransistorsOxide Thin-film TransistorsPixel ArchitectureThreshold Voltage
This letter presents a novel active-matrix organic light-emitting diode (AMOLED) pixel circuit that uses amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a bottom-gate structure to compensate for the threshold voltage shift of the TFT. An a-IGZO TFT driven AMOLED display (70 × 70 pixels) on a glass substrate is fabricated and its reliability is evaluated under electrical stress.
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