Bottom-gate Architectures
Bottom-Gate Architecture is a thin-film transistor configuration in which the gate electrode is positioned beneath the semiconductor layer, distinguished from other architectures by the vertical ordering of the gate relative to the source and drain electrodes.
106
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6.9K
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550
Authors
153
Institutions
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2017–2026
29
Variants
Bottom-gate Configuration
Parents
106
Xike Gao, Chong‐an Di, Yunbin Hu et al. · Journal of the American Chemical Society · 2010 · 282 citations
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Hong Kong University of Science and Technology, Hong Kong SAR China
3 publications · 77 citations
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153

Chinese Academy of Sciences
Beijing, China
8 h-index
53 publications
6.7K citations
Beijing National Laboratory for Molecular Sciences
Beijing, China
6 h-index
44 publications
6.1K citations
Kyung Hee University
Seoul, South Korea
5 h-index
13 publications
516 citations

National Yang Ming Chiao Tung University
Hsinchu, Taiwan
5 h-index
16 publications
2.2K citations
Institute of Chemistry
Beijing, China
5 h-index
40 publications
5.9K citations
Samsung (South Korea)
Seoul, South Korea
5 h-index
27 publications
4.3K citations

Hong Kong University of Science and Technology
Hong Kong, Hong Kong
4 h-index
13 publications
272 citations
Seoul National University
Seoul, South Korea
4 h-index
25 publications
439 citations
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16 publications · 885 citations
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11 publications · 428 citations
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7 publications · 193 citations
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4 publications · 224 citations
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4 publications · 158 citations
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