Homojunction fabrication in CuInSe2 by copper diffusion

R. D. Tomlinson, E. Elliott, Joel G. Parkes, M.J. Hampshire

Applied Physics Letters · 1975 · 26 citations · 4 references

Concepts

Abstract

Rectifying p−n junctions have been fabricated in single crystals of CuInSe2 by diffusion of copper at relatively low temperatures. Some evidence of device instability at room temperature has been obtained.

References

4