Room-Temperature Electrical Properties of Ten I-III-VI2 Semiconductors

Abstract

The room-temperature electrical properties of ten I-III-VI2 (I=Cu, Ag; III=Al, Ga, In; VI=S, Se) compounds are presented. The resistivities of eight of these compounds are rapidly changed by annealing under maximum and minimum chalcogen pressures. The Cu compounds can readily be made p type, a feature lacking in the analogous II-VI compounds. However, the Cu compounds with energy gaps of 1.7 eV or above have not been made n type.