Two-dimensional growth of Al films on Si(1 1 1)-7 × 7 at low-temperature

Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates

Ralf Kunkel, Bene Poelsema, Laurens K. Verheij et al. · Physical Review Letters · 1990 · 496 citations

Materials Science, Surface Characterization, Reentrant Behavior +12

Lattice match: An application to heteroepitaxy

A. Zur, T. C. McGill · Journal of Applied Physics · 1984 · 378 citations

Quantum Lattice System, Engineering, Crystal Growth Technology +16

“Electronic Growth” of Metallic Overlayers on Semiconductor Substrates

Qian Niu, Chih‐Kang Shih · Physical Review Letters · 1998 · 369 citations

Semiconductors, Materials Science, Metallic Overlayers +13

Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffraction

Joseph A. Stroscio, D. T. Pierce, Robert A. Dragoset · Physical Review Letters · 1993 · 297 citations

Engineering, Real Space View, Electron Diffraction +19

Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 K

W. F. Egelhoff, I. Jacob · Physical Review Letters · 1989 · 294 citations

Materials Science, Epitaxial Growth, Engineering +8