A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-ß-ratio Memory Cell

Abstract

A single-power supply 64 kB SRAM is fabricated in a 45 nm bulk CMOS technology. The SRAM operates at 1GHz with a 0.7 V supply using a fine-grained bitline segmentation architecture and with an asymmetrical unit-ratio 6T cell. With the asymmetrical cell, 22% cell area has been saved compared to a conventional symmetrical cell. This bulk SRAM is designed for GHz-class sub-lV operation.