Applied Physics Letters · 2001 · 13 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsSemiconductor Device MaterialsSemiconductor PhysicsDifferential ResistanceMolecular Beam EpitaxyQuantum Wires
A trench-type narrow InGaAs quantum-wire field-effect transistor (QWR–FET) with a cross section of 8×25 nm has been fabricated on a (311)A InP V-grooved substrate by molecular-beam epitaxy. The trench-type InGaAs QWR–FET has normal static characteristics at room temperature, and demonstrates clear negative differential resistance characteristics at 40 K with a high peak-to-valley current ratio (PVR=4.3) and a low onset voltage of 0.12 V.
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Single quantum wire semiconductor lasers
E. Kapon, S. Simhony, R. Bhat et al. · Applied Physics Letters · 1989 · 206 citations