Thin-film gallium arsenide solar cells on tungsten/graphite substrates

Abstract

Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS-type solar cells. The deposited films were oxidized in situ with an argon-oxygen mixture and, in some cases, followed by a water-vapor treatment. Gold was used as the barrier metal, and titanium oxide was used as the antireflection coating. Large-area (6–9 cm2) solar cells with an AM1 efficiency of about 5.5% have been produced.