C. Lanza

Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces

J. M. Woodall, G. D. Pettit, Thomas N. Jackson et al. · Physical Review Letters · 1983 · 134 citations

Semiconductors, Semiconductor Technology, Engineering +9

Perpendicular transport across (Al,Ga)As and the Γ to X transition

P. M. Solomon, S. L. Wright, C. Lanza · Superlattices and Microstructures · 1986 · 90 citations

Engineering, Physics, Applied Physics +4

One-dimensional numerical simulation of ac discharges in a high-pressure mixture of Ne+0.1% Ar confined to a narrow gap between insulated metal electrodes

O. Sahni, C. Lanza, W. E. Howard · Journal of Applied Physics · 1978 · 59 citations

Engineering, Glow Discharge, Plasma Science +20

Importance of the dependence of the secondary electron emission coefficient on <i>E</i>/<i>p</i>0 for Paschen breakdown curves in ac plasma panels

O. Sahni, C. Lanza · Journal of Applied Physics · 1976 · 59 citations

Electrical Engineering, Plasma Electronics, Engineering +13

Efficiency calculations for thin-film polycrystalline semiconductor Schottky barrier solar cells

C. Lanza, H.J. Hovel · IEEE Transactions on Electron Devices · 1977 · 49 citations

Engineering, Organic Solar Cell, Semiconductor Materials +21