Applied Physics Letters · 1982 · 78 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous SemiconductorsPhotoelectron SpectroscopySemiconductor PhysicsSilicon MaterialsWide Band Gap SemiconductorsAdmittance AnalysisAmorphous SiliconBulk DensityElectronic Density Of StatesFermi LevelFermi SurfaceHydrogenated Amorphous SiliconSilicon Electrical Properties
We have observed a reversible photoinduced modification of the bulk density of gap states in a-Si:H associated with the Staebler–Wronski effect. A detailed numerical analysis of diode admittance and deep level transient spectroscopy measurements shows that the changes in these properties after illumination can be explained by a lowering of the bulk Fermi level and an increase in the density of states below midgap.
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