Journal de physique · 1978 · 134 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor MaterialsThin FilmsTransport PhenomenaCarrier TransportCharge Carrier TransportSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesAmorphous Semiconductor FilmsAmorphous SiliconCharge Transfer At Semiconductor InterfacesCharge Transport MeasurementsElectrical Transport PropertiesInterface Charge TransportTransport In Amorphous Materials
It is shown that the large variations found in transport measurements in thin films of low density-of-states amorphous silicon can be explained by the effect of a variable charge density at the film-substrate interface. The amount and even the sign of these charges have been varied by application of an electric field across the substrate. These surface charges effects can be used to measure unambiguously the density of states in the gap. It is found to be between 1016 and 1017 cm-3 eV-1, significantly smaller than values deduced from field-effect measurements.
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Hydrogenation of evaporated amorphous silicon films by plasma treatment
D. Kaplan, N. Sol, G. Velasco et al. · Applied Physics Letters · 1978 · 115 citations