Concepedia

Interface Charge Transport

Interface Charge Transport is a fundamental charge transfer mechanism that governs the movement of charge carriers across the boundary between dissimilar semiconductor materials or between a semiconductor and another phase, distinguished by interfacial electric fields, defect states, and band alignment effects that modulate carrier injection, recombination, and conduction behavior.

541

Publications

29.5K

Citations

2.5K

Authors

722

Institutions

Publications per year

2017–2026

200

Parents

Publications

541

Charge Coupled Semiconductor Devices

W. S. Boyle, George Smith · Bell System Technical Journal · 1970 · 948 citations

, , +17

Physical Chemistry of Semiconductor−Liquid Interfaces

Arthur J. Nozik, Rüdiger Memming · The Journal of Physical Chemistry · 1996 · 896 citations

, , +17

Efficient charge generation by relaxed charge-transfer states at organic interfaces

Koen Vandewal, Steve Albrecht, Eric T. Hoke et al. · Nature Materials · 2013 · 767 citations

, , +15

Molecular Bulk Heterojunctions: An Emerging Approach to Organic Solar Cells

Jean Roncali · Accounts of Chemical Research · 2009 · 710 citations

, , +17

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Zhihao Yu, Yiming Pan, Yuting Shen et al. · Nature Communications · 2014 · 698 citations · Full text

, , +16

1–5 of 541

Authors

2.5K

  1. DC
    David Cahen

    Weizmann Institute of Science, Israel

    4 publications · 647 citations

    4

    h-index

  2. ZL
    Zhong Lin Wang

    Georgia Institute of Technology, United States

    4 publications · 853 citations

    4

    h-index

  3. SL
    Songsong Li

    China University of Petroleum, Beijing, China

    3 publications · 103 citations

    3

    h-index

  4. YZ
    Yong Zhao

    Beihang University, China

    3 publications · 343 citations

    3

    h-index

  5. RA
    R. A. A. Kubiak

    University of Warwick, United Kingdom

    3 publications · 68 citations

    3

    h-index

1–5 of 2.5K

Institutions

722

  1. Chinese Academy of Sciences

    Beijing, China

    14 h-index

    68 publications

    3K citations

  2. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    24 publications

    2K citations

  3. National University of Singapore

    Singapore, Singapore

    10 h-index

    36 publications

    2.7K citations

  4. The University of Tokyo

    Tokyo, Japan

    9 h-index

    33 publications

    2.6K citations

  5. Xi'an Jiaotong University

    Xi'an, China

    9 h-index

    26 publications

    953 citations

  6. Georgia Institute of Technology

    Atlanta, United States

    8 h-index

    20 publications

    2.3K citations

  7. Stanford University

    Stanford, United States

    7 h-index

    26 publications

    7.8K citations

  8. Tsinghua University

    Beijing, China

    7 h-index

    19 publications

    567 citations

1–8 of 722

Venues

  1. Journal of Applied Physics

    25 publications · 1.6K citations

    18

    h-index

  2. Applied Physics Letters

    28 publications · 908 citations

    17

    h-index

  3. ACS Applied Materials & Interfaces

    18 publications · 755 citations

    16

    h-index

  4. Applied Surface Science

    13 publications · 414 citations

    12

    h-index

  5. 12

    h-index

1–5