Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

Werner Götz, N. M. Johnson, J. Walker et al. · Applied Physics Letters · 1996 · 490 citations

Materials Engineering, Semiconductors, Chemical Engineering +12

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

Zhaohui Zhong, Fang Qian, Deli Wang et al. · Nano Letters · 2003 · 465 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

J. B. Webb, H. Tang, S. Rolfe et al. · Applied Physics Letters · 1999 · 153 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Deep levels in the upper band-gap region of lightly Mg-doped GaN

Peter Hacke, H. Nakayama, Theeradetch Detchprohm et al. · Applied Physics Letters · 1996 · 136 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Magnesium acceptor levels in GaN studied by photoluminescence

Annamraju Kasi Viswanath, Eun Joo Shin, Joo In Lee et al. · Journal of Applied Physics · 1998 · 95 citations

Materials Engineering, Semiconductors, Materials Science +14