Applied Physics Letters · 1990 · 59 citations · 8 references
EngineeringChemistryMaterials ScienceElectronic MaterialsInterface ScienceSemiconductor MaterialsRaman SpectroscopySemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesChemical Reaction MechanismsGallium ArsenideHeterostructure MaterialsHeterostructuresRaman SpectraSemiconductor CharacterizationZinc SelenideZinc Sulfides
When ZnSe is deposited at temperatures commonly used for epitaxy onto GaAs, the possibility arises that selenium or zinc reacts with the substrate and thin interfacial layers consisting of a gallium selenide or a zinc arsenide are formed. In particular, Ga2Se3, which is thermodynamically the most stable, has been suggested as a likely candidate. In this study we present evidence for the formation of Ga2Se3 using Raman spectroscopy as a fingerprint technique. Ga2Se3 layers were grown on GaAs and the Raman spectra thereof were compared with those of ZnSe/GaAs heterostructures.
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Long wavelength lattice vibrations in GaS and GaSe
J. C. Irwin, R. M. Hoff, B. P. Clayman et al. · Solid State Communications · 1973 · 92 citations