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Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs

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Citations

4

References

2012

Year

Abstract

A comprehensive study of the impact of back biasing on carrier transport behavior in Ultra-Thin Body and BOX (UTBB) Fully Depleted SOI (FD-SOI) MOSFETs and its implications for deeply scaled device performance is presented.

References

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