Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 48 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ChemistrySurface SciencePhotochemical KineticsPhotochemistrySemiconductor SurfacesSurface PhysicsSurface Reaction KineticsX-ray Photoelectron SpectroscopyEtch ChemistryEtchingGas-phase ReactionsInterfacial Reaction KineticsLaser Surface EtchingPhotochemical Surface ReactionsSurface EtchingSurface Growth
Thermally grown SiO2 and crystalline GaAs surfaces exposed to an etching gas under an ArF excimer laser irradiation have been studied by in situ x-ray photoelectron spectroscopy (XPS). Reaction kinetics of photochemical etching and resulting products on the solid surfaces have been revealed from the chemical shifts of adsorbates and substrate atoms. Etching products in SiO2/(NF3+H2) system are confirmed to be SiF4, N2O, and NO2. For the etching of GaAs in HCl, GaCl3 and AsCl3 are found to be the most probable products in the gas phase.