The physics of heavily doped n+-p junction solar cells

The Theory of<i>p-n</i>Junctions in Semiconductors and<i>p-n</i>Junction Transistors

W. Shockley · Bell System Technical Journal · 1949 · 2.1K citations

Engineering, Electrical Engineering, Materials Science +17

Electric Conduction in Phosphorus Doped Silicon at Low Temperatures

Chikako Yamanouchi, Kanji Mizuguchi, Wataru Sasaki · Journal of the Physical Society of Japan · 1967 · 279 citations

Natural Sciences, Materials Science, Physics +17

Bandgap narrowing in moderately to heavily doped silicon

H. P. D. Lanyon, Richard A. Tuft · IEEE Transactions on Electron Devices · 1979 · 161 citations

Engineering, Materials Science, Physics +17

Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon. II. A Unified Treatment

J. D. Quirt, J.R. Marko · Physical review. B, Solid state · 1973 · 151 citations

Natural Sciences, Materials Science, Physics +10

Specific heat study of heavily P doped Si

N. Kobayashi, Satoshi Ikehata, S. Kobayashi et al. · Solid State Communications · 1977 · 129 citations

Engineering, Materials Engineering, Materials Science +12