Metal/conductive-polymer junction: an In/poly(N-methylpyrrole) diode with a tunnel Schottky junction

Abstract

The temperature dependence of the J-V characteristics of an In/poly(N-methylpyrrole) junction device has been measured in order to investigate the junction properties. The barrier height and the effective Richardson constant of the junction have been determined to be 0.38 eV and 1.3*10-4 A cm-2 K-1 by the Richardson plots. The extremely small effective Richardson constant has been due to the existence of the composite layer, acting as a tunnelling one, formed by the reaction of the indium with the polymer surface.