Polypyrrole-semiconductor Schottky barriers

Abstract

Junctions between polypyrrole, a conducting polymer formed by electrooxidation, and n-type semiconductors have been studied. Cadmium sulphide and titanium dioxide were chosen as substrates as a complement to earlier studies on silicon. The junctions behave as Schottky barriers on these semiconductors. The series resistance of the polypyrrole film is large and was taken into account in the evaluation of the data. The barrier heights of the junctions are compared with those found with ordinary metals. It is deduced that the work function of polypyrrole must be close to 5 eV.