Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

Woo Young Choi, Byung‐Gook Park, Jong Duk Lee et al. · IEEE Electron Device Letters · 2007 · 1.9K citations

Engineering, Electrical Engineering, Microelectronics +16

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

Joachim Knoch, S. Mantl, Joerg Appenzeller · Solid-State Electronics · 2007 · 296 citations

Engineering, Computer Engineering, Electrical Engineering +12

Graphene Nanoribbon Tunnel Transistors

Qin Zhang, Tian Fang, Huili Grace Xing et al. · IEEE Electron Device Letters · 2008 · 231 citations

Engineering, Electrical Engineering, Materials Science +15

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

Mathieu Luisier, Gerhard Klimeck · Journal of Applied Physics · 2010 · 179 citations · Full text

Engineering, Electrical Engineering, Physics +17

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

Mathieu Luisier, Gerhard Klimeck · IEEE Electron Device Letters · 2009 · 162 citations

Engineering, Electrical Engineering, Physics +17