Characterization of vapor grown (001) GaAs1−xPx layers by selective photo-etching

Etching of Dislocations on the Low-Index Faces of GaAs

M. S. Abrahams, C. J. Buiocchi · Journal of Applied Physics · 1965 · 338 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dislocation morphology in graded heterojunctions: GaAs1?xPx

M. S. Abrahams, Leonard R. Weisberg, C. J. Buiocchi et al. · Journal of Materials Science · 1969 · 273 citations

Engineering, Materials Science, Physics +14

Selective Photoetching of Gallium Arsenide

F. Kuhn-Kuhnenfeld · Journal of The Electrochemical Society · 1972 · 72 citations

Engineering, Materials Engineering, Materials Science +17

Dislocations in GaAs17−<i>x</i>P<i>x</i>

G. B. Stringfellow, P. E. Greene · Journal of Applied Physics · 1969 · 71 citations

Engineering, Materials Engineering, Materials Science +17

The interpretation of dislocation contrast in x-ray topographs of GaAs1−<i>x</i> P<i>x</i>

Sebastian Mäder, A. E. Blakeslee, J. Angilello · Journal of Applied Physics · 1974 · 37 citations

Engineering, Materials Engineering, Materials Science +16