The interpretation of dislocation contrast in x-ray topographs of GaAs1−<i>x</i> P<i>x</i>

Abstract

Misfit accommodation in epitaxially grown GaAs1−xPx was examined by x-ray topography which shows crosshatch contrast and by transmission electron microscopy which reveals individual misfit dislocations. Of these misfit dislocations 80% are glissile 60° dislocations and the remainder are perfect edge dislocations. Contrast considerations show that the x-ray images are fully compatible with the actual dislocation structure although they cannot resolve the individual dislocations.