Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Abstract

We report on the effect of substrate temperature on the threshold current density in GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy under various flux ratios. It is found that the threshold current density has W-shape dependence on the substrate temperature and exhibits minima of 600 A/cm 2 and 400 A/cm 2 at the substrate temperatures of 375°C and 650°C, respectively.