The characterization of heteroepitaxial silicon

Dislocation morphology in graded heterojunctions: GaAs1?xPx

M. S. Abrahams, Leonard R. Weisberg, C. J. Buiocchi et al. · Journal of Materials Science · 1969 · 273 citations

Engineering, Materials Science, Physics +14

Cross-sectional specimens for transmission electron microscopy

M. S. Abrahams, C. J. Buiocchi · Journal of Applied Physics · 1974 · 119 citations

Engineering, Materials Engineering, Materials Science +17

Early growth of silicon on sapphire. I. Transmission electron microscopy

M. S. Abrahams, C. J. Buiocchi, R. T. Smith et al. · Journal of Applied Physics · 1976 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Surface damage and the optical reflectance of single-crystal silicon

P. J. Zanzucchi, M. T. Duffy · Applied Optics · 1978 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +17

Misfit dislocations in heteroepitaxial Si on sapphire

M. S. Abrahams, C. J. Buiocchi, J. F. Corboy et al. · Applied Physics Letters · 1976 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +15