Photoconductance measurement on TlInGaP grown by gas source MBE

Quantum Cascade Laser

Jérôme Faist, Federico Capasso, Deborah L. Sivco et al. · Science · 1994 · 4.5K citations

Engineering, Electrical Engineering, Materials Science +17

InTlP — a proposed infrared detector material

Mark van Schilfgaarde, An-Ban Chen, Srini Krishnamurthy et al. · Applied Physics Letters · 1994 · 91 citations

Natural Sciences, Materials Science, Physics +12

Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

Z. Feit, D. Kostyk, R. J. Woods et al. · Applied Physics Letters · 1991 · 83 citations

Engineering, Materials Engineering, Materials Science +17

New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth

H. Asahi, Kazuhiko Yamamoto, Kakuya Iwata et al. · Japanese Journal of Applied Physics · 1996 · 68 citations

Engineering, Materials Engineering, Materials Science +17

Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy

H. K. Choi, Stephen Eglash · Applied Physics Letters · 1991 · 67 citations

Engineering, Electrical Engineering, Optoelectronics +16