Applied Physics Letters · 1994 · 16 citations · 14 references
Natural SciencesChemistryMaterials ScienceElectronic MaterialsSemiconductor MaterialsSpectroscopyDopingFluorescence SpectroscopyQuantum OptoelectronicsRare-earth-doped MaterialsAtmospheric Pressure DependenceDoping In NanostructuresExciton SpectroscopyExcitonsHydrostatic PressurePhotoluminescencePhotoluminescence SpectroscopyPressure Dependence
We have measured the photoluminescence spectra of nitrogen-doped ZnSe under hydrostatic pressure. From the pressure dependence of the peak positions of the acceptor-bound exciton and donor-acceptor-pair emissions, we show that highly doped samples have two donor-acceptor-pair transitions, one involving shallow and one involving deep donors. Our results confirm that one mechanism limiting the free hole concentration is compensation from this deep donor.
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M. A. Haase, Jun Qiu, J. M. DePuydt et al. · Applied Physics Letters · 1991 · 1.6K citations
Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells
Heonsu Jeon, Jie Ding, Wendy Patterson et al. · Applied Physics Letters · 1991 · 546 citations