Fabrication and Characterization of AlN/InN Heterostructures

Abstract

AlN/InN heterostructures have been fabricated on yttria stabilized zirconia (YSZ) substrates using the low temperature pulsed laser deposition (PLD) growth technique, and their structural and electronic properties have been investigated with various characterization techniques. We have found that using the low temperature PLD growth technique allows us to prepare abrupt and high quality AlN/InN heterointerfaces with an interfacial roughness less than 2 nm. Photoemission spectroscopy measurements using hard X-ray around 6 keV have revealed that the conduction band offset at the AlN/InN heterointerface is as large as 3.3 eV.