Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Jeong Woo Shon, Jitsuo Ohta, Kohei Ueno, +2

Scientific Reports

Room-temperature epitaxial growth of AlN films

Jitsuo Ohta, Hiroshi Fujioka, Shin‐ichi Ito, +1

Applied Physics Letters

Materials EngineeringMaterials ScienceAln FilmsAluminium NitrideEngineering +13

Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO

Atsushi Kobayashi, Hiroshi Fujioka, Jitsuo Ohta, +1

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringNanoelectronicsPulsed Laser DepositionMaterials Science +15

Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates

Atsushi Kobayashi, Satoshi Kawano, Yuji Kawaguchi, +2

Applied Physics Letters

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorCeramic Zno +11

Polarity control of GaN grown on ZnO (0001¯) surfaces

Atsushi Kobayashi, Yuji Kawaguchi, Jitsuo Ohta, +3

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringN PolarityGrowth Temperature Dependence +9

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, +2

APL Materials

Wide-bandgap SemiconductorChemical EngineeringElectrical EngineeringEngineeringApplied Physics +6

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, +3

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering +11

Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

Kazuhiro Sato, Jitsuo Ohta, Shigeru Inoue, +2

Applied Physics Express

Aluminium NitrideEngineeringThin Film Process TechnologyMisfit DislocationsSputtering Deposition +17

Experimental and theoretical investigation on the structural properties of GaN grown on sapphire

Jitsuo Ohta, Hiroshi Fujioka, M. Oshima, +2

Applied Physics Letters

Materials EngineeringMaterials ScienceStructural PropertiesN PolarityGroup-iii Nitrides +13

Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition

Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka

Journal of Applied Physics

Lattice-matched ZnoEngineeringCrystal Growth TechnologyLaser DepositionSemiconductors +14