Dry etching of through substrate via holes for GaAs MMIC’s

L. G. Hipwood, Patricia Wood

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 33 citations · 0 references

Concepts

Abstract

Through substrate via’s are essential in many GaAs monolithic microwave integrated circuits (MMIC’s). They allow for increased circuit complexity and provide low inductance grounding. A dry etch process is described which has been used for etching vias through 0.2 mm thick GaAs substrates. Freon 12 (CCl2F2) is used at high pressure in a RIE mode at 13.6 MHz. Polymer formation has been identified to be the key to controlling the hole profile.