Physical Review Letters · 2000 · 43 citations · 16 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsSurface ScienceAb Initio MethodsElectronic Band StructureElectronic StructureElectronic Structure Of SolidsSurface CrystallographySurface PhysicsElectronic Structure AnalysisScanning Tunneling SpectroscopySurface Atomic StructureSurface Electronic StructureSurface StatesVacanciesValence BandValence Band Structure
The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+/-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.
16
Nano-scale properties of defects in compound semiconductor surfaces
Ph. Ebert · Surface Science Reports · 1999 · 176 citations
Geometry and electronic structure of the arsenic vacancy on GaAs(110)
G. Lengel, R. Wilkins, Geoffrey W. Brown et al. · Physical Review Letters · 1994 · 97 citations