Physical Review Letters · 1994 · 79 citations · 12 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSurface ChemistrySurface ScienceDefects In Electronic MaterialsElectronic Structure Of SolidsSemiconductor DefectsSemiconductor SurfacesSurface ChargeSurface PhysicsBand GapCharge RelaxationDefect StatesElectronic Structure Of DefectsStructural RelaxationSurface StatesVacanciesVacancy Clusters
The dependence of the structural relaxation around phosphorous vacancies in InP(110) and GaP(110) surfaces on their charge state was investigated by scanning tunneling microscopy. Two charge transition levels were localized within the band gap. The symmetry of the vacancies is lowered with an increasing number of electrons bonded in the electronic defect states. The vacancies on InP(110) and GaP(110) surfaces have essentially the same structure.
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Atom-selective imaging of the GaAs(110) surface
R. M. Feenstra, Joseph A. Stroscio, J. Tersoff et al. · Physical Review Letters · 1987 · 613 citations