Applied Physics Letters · 1993 · 45 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsLight-emitting DevicesLight-emitting Diode MaterialsPorous SiliconSemiconductor Light-emitting MaterialsSiliconSilicon Carbide
We have fabricated a new type of light-emitting diode based on a porous silicon and microcrystalline silicon carbide pn junction. The visible light emission from 580 to 820 nm with a peak of 700 nm was observed at forward bias voltages larger than 18 V, and the emission was quite uniform over an area of 1 cm2.
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