IEEE Journal of Solid-State Circuits · 2005 · 41 citations · 17 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignBipolar Junction TransistorsCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignTiming AnalysisWide-bandgap Semiconductor DevicesBicmos TechnologyHigh-speed Circuit DesignLinear Feedback Shift RegistersOutput SwingPseudorandom GeneratorsSige Bicmos DesignSilicon Germanium Bipolar TransistorSwitching Performance
A 2/sup 31/-1 pseudorandom binary sequence (PRBS) generator with adjustable output data rates up to 80 Gb/s is reported in a production 130-nm BiCMOS process with 150-GHz f/sub T/ SiGe heterojunction bipolar transistor (HBT). The pseudorandom sequence is generated at 20 Gb/s using a linear feedback shift register (FSR), which is then multiplexed up to 80 Gb/s with a 4:1 multiplexer. A BiCMOS logic family combining MOSFETs and SiGe HBTs on high-speed paths is employed throughout the PRBS generator to maximize building block switching speed. Adjustable delay cells are inserted into critical clock paths to improve timing margins throughout the system. The PRBS generator consumes 9.8 W from a 3.3-V supply and can deliver an output voltage swing of up to 430 mV single-ended at 80 Gb/s.
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