Quantum simulation of noise in silicon nanowire transistors with electron-phonon interactions

Abstract

We present a quantum mechanical approach to the calculation of electronic noise in the presence of a continuous distribution of phase-breaking processes based on the nonequilibrium Green’s function formalism. Using this approach, we investigate the drain current and its fluctuations in silicon nanowire transistors taking into account the intravalley elastic and intervalley inelastic electron-phonon scattering mechanisms. The calculated results are compared against the results of phase-coherent transport at various bias conditions, which shows the role of electron-phonon scattering on the drain current noise.