Influence of the misorientation of 4H‐SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers

Abstract

We report a comparative investigation of MOCVD grown GaN epilayers deposited on misoriented 4H-SiC substrates. Crack-free layers can be grown on exact oriented substrates in contrast to growth on misoriented ones. Dependent on the degree of misorientation the crack patterns differ in density, distribution and orientation. The surface morphology and structural quality of GaN layers depend strongly on the substrate misorientation of the SiC substrate and very smooth layers with good structural quality and electrical properties were obtained for on-axis SiC. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)