Quantum drift-diffusion model for IMPATT devices

Large-signal analysis of a silicon Read diode oscillator

D.L. Scharfetter, H.K. Gummel · IEEE Transactions on Electron Devices · 1969 · 2.2K citations

Engineering, Electrical Engineering, Microelectronics +16

Theory of Tunneling

E. O. Kane · Journal of Applied Physics · 1961 · 1K citations

Natural Sciences, Electrical Engineering, Physics +13

Electron and hole ionization rates in epitaxial silicon at high electric fields

W.N. Grant · Solid-State Electronics · 1973 · 427 citations

Engineering, Materials Science, Physics +13

Macroscopic physics of the silicon inversion layer

Mario G. Ancona, H. F. Tiersten · Physical review. B, Condensed matter · 1987 · 325 citations

Engineering, Electrical Engineering, Physics +17

Drift velocity of electrons and holes and associated anisotropic effects in silicon

C. Canali, G. Ottaviani, A. Alberigi Quaranta · Journal of Physics and Chemistry of Solids · 1971 · 259 citations

Engineering, Materials Science, Physics +14