SID Symposium Digest of Technical Papers · 2007 · 14 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor ReliabilitySemiconductor Thin FilmsThin-film TransistorsAmorphous Silicon Thin-film TransistorsGate Driver DesignHydrogenated Amorphous SiliconThreshold Voltage
Abstract We proposed an Hydrogenated amorphous silicon thin film transistors (a‐Si:H TFT) robust gate driver on glass substrate for the 7‐inch WVGA TFT‐LCD panel. By utilizing the specific design technique, the threshold voltage (V th ) shift of the a‐Si TFT in the gate driver can be compensated. Under reliability simulations, the gate driver can operates correctly over 8 days in 80 °C, although the V th increased to ten times of the initial value. The integrated a‐Si TFT gate driver can effectively reduce the cost of TFT‐LCD manufacturing in the future.
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Defect pool in amorphous-silicon thin-film transistors
M. J. Powell, C. van Berkel, A. R. Franklin et al. · Physical review. B, Condensed matter · 1992 · 237 citations