Jun-Wei Tsai

The Instability Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistors under AC Bias Stress

Chun-Yao Huang, Teh-Hung Teng, Jun-Wei Tsai et al. · Japanese Journal of Applied Physics · 2000 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Instability mechanisms for the hydrogenated amorphous silicon thin-film transistors with negative and positive bias stresses on the gate electrodes

Ya‐Hsiang Tai, Jun-Wei Tsai, Huang‐Chung Cheng et al. · Applied Physics Letters · 1995 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Turnaround Phenomenon of Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Negative Bias Stress

Chun-Yao Huang, Jun-Wei Tsai, Teh-Hung Teng et al. · Japanese Journal of Applied Physics · 2000 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

Jun-Wei Tsai, Chun-Yao Huang, Ya‐Hsiang Tai et al. · Applied Physics Letters · 1997 · 13 citations

Engineering, Materials Science, Physics +17