Japanese Journal of Applied Physics · 1990 · 18 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryThin FilmsChemical Vapor DepositionInorganic MaterialsOxide SemiconductorsThin Film AnnealingThin Film Electrical PropertiesThin-film MaterialsAmorphous Thin FilmsChalcogenide Thin FilmsCritical Current DensityEpitaxial Film GrowthFilm Growth MechanismsMetalorganic Chemical Vapor DepositionSemiconducting Oxide MaterialsThin-film Oxides
BiSrCaCuO thin films were deposited on MgO(100) single crystal substrates by metalorganic chemical vapor deposition at 500°C and 2 Torr using fluorinated β-diketonate complexes of Sr, Ca and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides and a two step anealing protocol (750°C+850–870°C) was developed which gives c -axis oriented films of Bi 2 Sr 2 Ca 1 Cu 2 O x . The post-annealed films showed onsets in the resistive transition of 110 K and zero resistivity was achieved by 83 K. Critical current densities as high as 1.1×10 4 A/cm 2 were obtained at 25 K.
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