Pit formation during the morphological evolution of InGaAs/GaAs

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

D. J. Eaglesham, M. Cerullo · Physical Review Letters · 1990 · 2K citations

Natural Sciences, Materials Science, Physics +17

Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion

R.J. Asaro, William A. Tiller · Metallurgical Transactions · 1972 · 891 citations

Natural Sciences, Materials Engineering, Materials Science +16

Competing relaxation mechanisms in strained layers

J. Tersoff, F. K. LeGoues · Physical Review Letters · 1994 · 779 citations

Natural Sciences, Materials Engineering, Materials Science +17

Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

Frances M. Ross, J. Tersoff, R. M. Tromp · Physical Review Letters · 1998 · 670 citations

Natural Sciences, Materials Engineering, Materials Science +16

Relaxation of strained-layer semiconductor structures via plastic flow

Brian W. Dodson, Jeffrey Y. Tsao · Applied Physics Letters · 1987 · 552 citations

Natural Sciences, Materials Engineering, Materials Science +17