Concepedia
Journal of Crystal Growth · 1990 · 31 citations · 4 references
Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringMombe SystemApplied Physics“ Mbe-like ”Molecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorSemiconductor Nanostructures
4
Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs
Takafumi Yao, Toshihiko Takeda · Applied Physics Letters · 1986 · 189 citations
Materials Science, Materials Engineering, Electrical Engineering +13
Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
W. Stutius · Applied Physics Letters · 1978 · 152 citations
Materials Science, Deep Trapping Centers, Electrical Engineering +13
The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
Takafumi Yao · Japanese Journal of Applied Physics · 1986 · 50 citations
Engineering, Optoelectronic Devices, Semiconductor Nanostructures +18
A study of growth mechanism of ZnS and ZnSe in MOMBE using dimethylzinc and chalcogen hydrides as reactants
A. Yoshikawa, H. Oniyama, Shigeki Yamaga et al. · Journal of Crystal Growth · 1989 · 16 citations
Materials Science, Inorganic Chemistry, Engineering +4