Characterization of the electrostatic bonding of silicon and Pyrex glass

Abstract

The electrostatic bonding of silicon and Pyrex glass was studied in order to find out the influence of process parameters on the final result and to be able to optimize the process with regard to the fabrication of silicon sensors. The most important parameters are the temperature and the voltage. The main criterion used for the optimization of their values was the induced stress in the silicon part of the bonded ensemble. It was found that a temperature of 360 degrees C and voltages in the range 750-1000 V are suitable.