IEEE Transactions on Electron Devices · 1966 · 53 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor PhysicsConductanceImpuritiesMetal-semiconductor Field-effect TransistorsNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsSemiconductor TechnologyThermal NoiseThin Oxide Layers
The theory of the thermal noise due to channel conductance fluctuation is extended for insulated gate (MOS) field effect transistors with the gate voltage induced channel structure by including the bulk charge from the ionized impurities in the semiconductor substrate. In the saturation range of the drain characteristics, the theory shows that <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R_{gns} g_{ms} \geq 2/3</tex> , where the equality condition corresponds to the previously obtained result for an intrinsic or chemically pure semiconductor substrate. Satisfactory correlations between theory and experimental measurements are obtained for both P-channel and N-channel silicon devices with either a thin oxide (2000A) or a thick oxide (6200 and 8400A) gate.
6
Thermal Noise in Field-Effect Transistors
A. Der Ziel · Proceedings of the IRE · 1962 · 345 citations