Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

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1-eV solar cells with GaInNAs active layer

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Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

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Surface and interface depletion corrections to free carrier-density determinations by hall measurements

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43.5% efficient lattice matched solar cells

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