Atomic Layer Deposition of High‐<i>k</i> Oxides of the Group 4 Metals for Memory Applications

Abstract

Abstract This paper reviews several high‐k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi‐layers in the form of nano‐laminates are of interest.Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development.