Selenium implantation in indium phosphide

Abstract

Selenium implantation has been studied as a means of fabricating n-type layers in Fe-doped, semi-insulating indium phosphide. Channeling measurements using 1.5-MeV He ions have shown that amorphous layers (about 0.1 μm thick) are created by Se implantation at room temperature and these layers recrystallize after annealing at above 700 °C. Differential Hall-effect and sheet-resistivity measurements have revealed that very shallow (<0.1 μm) and highly doped (nmax = ∼2×1019 /cm3) n+ layers can be formed by implantation with 100-keV ions at room temperature and by subsequent annealing at 700 °C. Profile measurements have also indicated that Se ions implanted into elevated temperature InP tend to diffuse in the crystal during the implantation.