MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates

Band lineups and deformation potentials in the model-solid theory

Chris G. Van de Walle · Physical review. B, Condensed matter · 1989 · 2.2K citations

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Band Anticrossing in GaInNAs Alloys

W. Walukiewicz, Joel W. Ager, E. E. Haller et al. · Physical Review Letters · 1999 · 1.6K citations

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Gas-Source Molecular Beam Epitaxy of GaN_xAs_1-x Using a N Radical as the N Source

Masahiko Kondow, K. Uomi, Kazuhiko Hosomi et al. · Japanese Journal of Applied Physics · 1994 · 348 citations

Engineering, Materials Engineering, Materials Science +15

First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Manijeh Razeghi, M. Defour, R. Blondeau et al. · Applied Physics Letters · 1988 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Masahiko Kondow, K. Uomi, T. Kitatani et al. · Journal of Crystal Growth · 1996 · 117 citations

Engineering, Materials Engineering, Materials Science +14