In situ metrology advances in MOCVD growth of GaN-based materials - Concepedia

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In situ metrology advances in MOCVD growth of GaN-based materials

35

Citations

5

References

2004

Year

M. V. Belousov, B. Volf, J. Ramer, E. Armour, A. Gurary

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideSitu Metrology AdvancesCategoryiii-v Semiconductor

References

	Year	Citations

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