In situ metrology advances in MOCVD growth of GaN-based materials

Temperature-Its Measurement and Control

RK · The American Journal of the Medical Sciences · 1941 · 371 citations

Engineering, Physics, Instrumentation +11

Stress evolution during metalorganic chemical vapor deposition of GaN

Sean Hearne, Eric Chason, Jung Han et al. · Applied Physics Letters · 1999 · 243 citations

Natural Sciences, Materials Engineering, Materials Science +17

Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation

Jerrold A. Floro, Eric Chason, S. R. Lee et al. · Journal of Electronic Materials · 1997 · 164 citations

Natural Sciences, Materials Engineering, Materials Science +14

A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using <i>in</i> <i>situ</i> normal incidence reflectance

W.G. Breiland, Kevin Killeen · Journal of Applied Physics · 1995 · 152 citations

Natural Sciences, Materials Engineering, Materials Science +17

Optical Diagnostics for Thin Film Processing

W.G. Breiland · Optical Engineering · 1997 · 105 citations

Natural Sciences, Materials Science, Physics +17