A1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate

Crosshatched surface morphology in strained III-V semiconductor films

Kevin H. Chang, Ronald Gilbala, David J. Srolovitz et al. · Journal of Applied Physics · 1990 · 128 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy

Anne Ponchet, A. Rocher, J.-Y. Emery et al. · Journal of Applied Physics · 1993 · 87 citations

Natural Sciences, Materials Engineering, Materials Science +17

Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer

Hiroshi Ishikawa, I. Suemune · IEEE Photonics Technology Letters · 1994 · 55 citations

Engineering, Materials Science, Physics +17

Multiple dislocation loops in linearly graded In<i>x</i>Ga1−<i>x</i>As (0≤<i>x</i>≤0.53) on GaAs and In<i>x</i>Ga1−<i>x</i>P (0≤<i>x</i>≤0.32) on GaP

J. C. P. Chang, T. P. Chin, C. W. Tu et al. · Applied Physics Letters · 1993 · 27 citations

Engineering, Materials Science, Physics +17

Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers

A. Mathur, J.S. Osinski, Piotr Grodzinski et al. · IEEE Photonics Technology Letters · 1993 · 16 citations

Engineering, Electrical Engineering, Materials Science +17